Utilizing nanowire for different applications

ABSTRACT

One embodiment in accordance with the invention is an apparatus that can include a non-single crystal substrate and a nanowire grown from a surface of the non-single crystal substrate. Furthermore, the apparatus can also include an electrode coupled to the nanowire. It is noted that the nanowire can be electrically conductive and/or optically active.

BACKGROUND

Currently, conventional solar cell manufacturing techniques typicallystart with very high quality single crystal substrates such as siliconin order to produce a solar cell having high efficiency. Otherwise, if anon-single crystal substrate is used, then the efficiency of the solarcell decreases. However, there are disadvantages associated with thistype of conventional solar cell manufacturing technique.

For example, one disadvantage is that the demand for high quality singlecrystal silicon substrates for manufacturing solar cells is currently solarge that these substrates are in short supply. As such, manufacturingsolar cells can be very costly, and could occasionally be impossible, asthe demands for solar cells based on single crystal substratesincreases, due to the scarcity of the high quality single crystalsilicon substrates.

Therefore, it is desirable to address one or more of the above issues.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side section view of an exemplary apparatus that includesone or more nanowires in accordance with various embodiments of theinvention.

FIG. 2 is a side section view of another exemplary apparatus thatincludes one or more nanowires in accordance with various embodiments ofthe invention.

FIG. 3 is a side section view of yet another exemplary apparatus thatincludes one or more nanowires in accordance with various embodiments ofthe invention.

FIG. 4 is a side section view of still another exemplary apparatus thatincludes one or more nanowires in accordance with various embodiments ofthe invention.

FIG. 5 is a side section view of another exemplary apparatus thatincludes one or more nanowires in accordance with various embodiments ofthe invention.

FIG. 6 is a flow diagram of a method in accordance with variousembodiments of the invention.

FIG. 7 is another flow diagram of a method in accordance with variousembodiments of the invention.

DETAILED DESCRIPTION

Reference will now be made in detail to various embodiments inaccordance with the invention, examples of which are illustrated in theaccompanying drawings. While the invention will be described inconjunction with various embodiments, it will be understood that thesevarious embodiments are not intended to limit the invention. On thecontrary, the invention is intended to cover alternatives, modificationsand equivalents, which may be included within the scope of the inventionas construed according to the Claims. Furthermore, in the followingdetailed description of various embodiments in accordance with theinvention, numerous specific details are set forth in order to provide athorough understanding of the invention. However, it will be evident toone of ordinary skill in the art that the invention may be practicedwithout these specific details. In other instances, well known methods,procedures, components, and circuits have not been described in detailas not to unnecessarily obscure aspects of the invention.

FIG. 1 is a side section view of an exemplary apparatus 100 thatincludes one or more nanowires 102 grown (or formed) in a “bridging”configuration in accordance with various embodiments of the invention.Specifically, within apparatus 100, one or more single crystallinenanowires 102 (represented by each straight line) can be grown onnon-single crystalline material surfaces 104 and 106 (e.g.,polycrystalline silicon, amorphous silicon, poly-crystal (grain size isin the range of micro meter to nano meter) diamond and relatedcarbon-based materials and/or microcrystalline silicon), which istypically an inexpensive material. As such, the manufacturing costs ofapparatus 100 can be greatly reduced since it does not involve expensivematerials (e.g., single crystalline silicon). Once manufactured,apparatus 100 can be forward biased thereby causing nanowires 102 toemit light 110 (e.g., becoming optically active), and enabling apparatus100 to be used as part of a display device (not shown). Moreover, ifapparatus 100 is not biased, nanowires 102 can each absorbelectromagnetic wave having a wide range of energy (or more) 112 andconvert it into electrical current (e.g., becoming electricallyconductive), thereby enabling apparatus 100 to be used. as part of asolar cell (or photovoltaic cell). Furthermore, if apparatus 100 isreverse biased, nanowires 102 can each absorb electromagnetic wavehaving a wide range of energy (or more) 112 and convert it intoelectrical current with higher speed and efficiency than at zero bias,thereby enabling apparatus 100 to be used as part of a radiationdetector. By utilizing apparatus 100 in these different applications,the manufacturing costs of these devices can be greatly reduced.

It is further noted that apparatus 100 can be used for a wide variety oflight sources. For example in various embodiments, the nanowires 102 canemit “light” 110 within, but is not limited to, the infraredwavelengths, the visible light wavelengths, the ultraviolet (UV)wavelengths, and any electromagnetic wavelength. Additionally, thenanowires 102 of apparatus 100 can be used as a gain region to producelaser light 110 by being appropriately placed in an optical cavity as ina conventional laser structure.

Within FIG. 1, since the nanowires 102 of apparatus 100 can beimplemented to produce different colors of visible light 110, aplurality of apparatuses 100 can be utilized to generate light for adisplay device, such as a flat panel display. For example within oneembodiment, three different apparatuses 100 can be used for each pixelof the display. Specifically, the nanowires 102 of a first apparatus 100can be implemented with material that generates red light for a displaypixel, the nanowires 102 of a second apparatus 100 can be implementedwith material that generates green light for the display pixel, and thenanowires 102 of a third apparatus 100 can be implemented with materialthat generates blue light for the display pixel. The first, second andthird apparatuses 100 can then be driven, for example, by amorphous thinfilm transistors often found in a conventional liquid crystal display,but are not limited to such. Additionally, a plurality of apparatuses100 can be utilized for display arrays. It is pointed out that for asolar cell application, the nanowires of apparatus 100 can beimplemented with all different types of materials in one cell since theyare used to absorb light (and/or any electromagnetic wave) 112 having awide range of spectrum.

It is noted that when apparatus 100 is utilized as a light emitter, aradiation/light detector or as a photovoltaic cell, its single crystalnanowires 102 exhibit all the properties of single crystallinesemiconductors, but apparatus 100 can be fabricated with inexpensivematerials, such as, a non-single crystalline substrate 108 that can beimplemented with, but is not limited to, glass, Mylar®, quartz, metal,steel, stainless steel, and/or other inexpensive substrate materials.Furthermore, the protruding portions 104 and 106 can also be fabricatedwith inexpensive materials, as long as the surface of the materialspossess physical characteristics that enable the growth of nanowires,such as but not limited to, polycrystalline silicon, amorphous silicon,poly-crystal (grain size is in the range of micro meter to nano meter)diamond and related carbon-based materials, microcrystalline silicon,and/or any material that can withstand nanowire growth temperatures(e.g., which can be approximately 500 degrees Celsius). Low temperaturegrowth techniques such as plasma enhanced chemical vapor deposition canbring the nanowire growth temperature significantly lower than 500 C. Assuch, apparatus 100 is inexpensive to manufacture and yet its nanowires102 retain the single crystalline properties for an efficient solarcell, radiation/light detector or light emitter. Note that a displaydevice (not shown) can include one or more apparatuses 100 for emittinglight. Furthermore, a solar cell can include one or more apparatuses 100for absorbing light having a wide range of spectrum (or anyelectromagnetic wave) and converting it into an electrical current forfurther improvement in efficiency. Moreover, a radiation/light detectorcan include one or more apparatuses 100.

Within FIG. 1, as noted above, the manufacturing of apparatus 100 can beinexpensive. Additionally, in accordance with an embodiment, thenon-single crystal substrate material 108 that is part of apparatus 100could come off a roll. As such, the manufacturing of multipleapparatuses 100 can be implemented with a roll manufacturing process.Moreover, since the non-single crystal substrate material 108 caninclude light weight materials, such as Mylar®, the resultant apparatus100 can be light weight. Additionally, the nanowires 102 can be growndense enough to capture light (or any electromagnetic wave), but therecan be a lot of air space between the nanowires 102 thereby making itlight weight. This can be desirable when dealing with applications whereweight is an issue, such as outer space applications. For example inaccordance with one embodiment, a plurality of apparatuses 100fabricated on Mylar to function as solar cells could be coiled into atight roll and not add much weight to its associated spacecraft orsatellite. Once the space craft or satellite reaches outer space, thesolar cell roll can then be unraveled and provide its desiredfunctionality.

Since apparatus 100 can be fabricated on a transparent substrate 108, aplurality of apparatuses 100 can be used in situations where it isdesirable to have solar cell application, but also desirable to havesome transparency. For example, one or more apparatuses 100 including atransparent non-single crystal substrate film 108 can be applied towindows, skylight on roofs, and anywhere else. Note that for a displaydevice, the apparatus 100 can output light (or any electromagnetic wave)110 in different directions, including through a transparent non-singlecrystal substrate 108. It is understood that for a solar cell (or aphotovoltaic cell or a radiation/light detector), the apparatus 100 canreceive light (or any electromagnetic wave) 112 from differentdirections, including through a transparent non-single crystal substrate108. It is appreciated that if the apparatus 100 solar cells are goingto be put on an opaque roof, there may not be a need for it to have atransparent substrate 108. Instead, the substrate 108 can be implementedwith a good heat conductor, such as, thin aluminum or stainless steelsheets that are also durable.

Within FIG. 1, the apparatus 100 can include protruding portions 104 and106, which can each be fabricate with any of the wide variety ofmaterials mentioned herein, but is not limited to such. The protrudingportions 104 and 106 can also be referred to as walls, columns, and thelike. It is noted that the protruding portions 104 and 106 can bedisposed on (or coupled to) the non-single crystalline substrate 108 inany manner. The single crystal nanowires 102 can each be grown (orgenerated) from the non-single crystal protruding portion 104 towardsprotruding portion 106, or vice-versa. One or more of the single crystalnanowires 102 can be grown (or generated) from the non-single crystalprotruding portion 104 towards protruding portion 106 while one or moreof the single crystal nanowires 102 can be grown (or generated) from thenon-single crystal protruding portion 106 towards protruding portion104. In any of these situations, the nanowires 102 can each haveelectrical contact (or be electrically coupled) at both of its ends. Assuch, the nanowires 102 of apparatus 100 can be referred to as abridging configuration. It is understood that each of nanowires 102 canbe grown (or generated) having a random orientation. Nanowires 102 canbe grown (or generated) such that they are oriented with each otherand/or in a particular direction. It is noted that the nanowires 102 ofapparatus 100 are able to combine the advantages (e.g., highphoton-to-electron conversion efficiency) of single crystalsemiconductor properties with a non-single crystalline substrate 108 andother non-single crystalline materials 104 and 106. It is pointed outthat even though protruding portions 104 and 106 are composed ofnon-single crystalline material, nanowires 102 are able to be grown assingle crystal structures because of their one-dimensional structuralcharacteristics with extremely small diameter. The material ofprotruding portions 104 and 106 can be heavily doped (e.g., with boronand phosphorus for amorphous and/or microcrystalline silicon) such thatthey will be electrodes and/or they will generate built-in potentialwithin nanowires 102.

The protruding portion 104 can be fabricated with p-type material whilethe protruding portion 106 can be fabricated with n-type material. Assuch, forward biasing can be applied to the p-type material ofprotruding portion 104 thereby causing nanowires 102 to emit light 110(or any electromagnetic wave). However, if no bias is applied toapparatus 100, the built-in potential within the nanowires 102 willseparate excess electrons and holes generated by absorbing light (or anyelectromagnetic wave) to cause electrical current to flow throughexternal circuits that could be connected or coupled to apparatus 100.

It is noted that the nanowires 102 of apparatus 100 can each beimplemented with any type of nanowire (e.g., material, configuration,and/or the like). For example, each nanowire 102 can be implemented withat least, but is not limited to, a metal, a group III-V compoundsemiconductor material (e.g., GaAs, GaN, InP, etc.) and related alloys,a group II-VI compound semiconductor material (e.g., ZnO, CdSe, etc.)and related alloys, a group IV semiconductor material (e.g., Si,germanium (Ge), SiGe, etc.) and related alloys, and/or the like.Furthermore, the composition of nanowires 102 can be intrinsic or eachcan be partially doped. For example, each nanowire 102 can be doped asn-type material, p-type material, or undoped. Moreover, the nanowires102 can be made out of one material like a GaAs or related alloys. Also,nanowires 102 can contain different sections. For example, one or moreof nanowires 102 can have a section made out of a first material and asecond section made out a second material, and so forth, therebyresulting in one or more of hetero-material nanowire 102. Additionally,one or more of nanowires 102 can be concentric wherein it has acylindrical core of a first material that can be coated with a secondmaterial, and so forth. It is pointed out that the various embodimentsin accordance with the invention can be implemented with any type ofnanowire.

Within FIG. 1, it is pointed out that another advantage of apparatus 100is that the growth time of nanowires 102 can be short (e.g.,approximately 30 seconds to a minute to grow an active region ofapproximately 1 micrometer). As such, this is a factor that contributesto a lower overall processing time of apparatus 100. In comparison, atypical light emitting diode (LED) and a laser each involves a growthtime of 3 to 4 hours. So the manufacturing time of apparatus 100 is veryshort which makes it very attractive as a light emitter, radiation/lightdetector, and a solar cell.

FIG. 2 is a side section view of an exemplary apparatus 200 thatincludes one or more nanowires 202 grown in a “bridging” configurationin accordance with various embodiments of the invention. It is notedthat apparatus 200 is similar to apparatus 100 of FIG. 1. However, theprotruding portions 204 and 206 of apparatus 200 of FIG. 2 are formedfrom the same material as the non-single crystal substrate 208.Furthermore, apparatus 200 also includes an insulator 210 thatelectrically separates the p-type material of substrate 208 from itsn-type material, thereby enabling electrical current to flow throughnanowires 202 without having electric shortage within the non-singlecrystal substrate 208.

Specifically, single crystal nanowires 202 can be grown from protrudingportion 204 of substrate 208 towards protruding portion 206, or viceversa. One or more single crystal nanowires 202 can grow from one orboth of protruding portions 204 and 206 to eventually couple with theother protruding portion.

Within FIG. 2, it is understood that nanowires 202 can be implemented inany manner similar to that described herein with reference to nanowires102. Additionally, nanowires 202 can operate in any manner similar tothat described herein with reference to nanowires 102. Moreover, thenon-single crystal substrate 208 can be implemented in any mannersimilar to that described herein with reference to the non-singlecrystal substrate 108.

The apparatus 200 can include protruding portions 204 and 206, which caneach be fabricated with any of the wide variety of materials mentionedherein, but is not limited to such. The protruding portions 204 and 206can also be referred to as walls, columns, and the like. The nanowires202 can each have electrical contact (or be electrically coupled) atboth of its ends. As such, the nanowires 202 of apparatus 200 can bereferred to as a bridging configuration. It is noted that the nanowires202 of apparatus 200 are able to combine the advantages (e.g., highphoton-to-electron conversion efficiency) of single crystalsemiconductor properties with a non-single crystalline substrate 208. Itis pointed out that even though protruding portions 204 and 206 arecomposed of non-single crystalline material, nanowires 202 are able tobe grown as single crystal structures because of their one-dimensionalstructural characteristics with extremely small diameter. The materialof protruding portions 204 and 206 can be heavily doped (e.g., withboron and phosphorous for amorphous or microcrystalline silicon) suchthat they will be electrodes and/or they will generate built-inpotential within nanowires 202.

FIG. 3 is a side section view of an exemplary apparatus 300 thatincludes one or more nanowires 304 grown in a “virtual bridging”configuration in accordance with various embodiments of the invention.Specifically, note that the nanowires 304 of apparatus 300 can be grownto a desired length on a non-single crystalline substrate 308.Subsequently, a layer of insulator material 306 can be disposed suchthat it substantially fills in the gaps between the nanowires 304. Anelectrode 302 (e.g., gold germanium, silicon gold, or other ohmic metalcontact) can then be coupled to the nanowires 304, which means there isnow an electrical connection from the top of each nanowire 304 to itsbottom that is coupled to the non-single crystalline substrate 308.

Note that nanowires 304 of apparatus 300 can be implemented in anymanner similar to that described herein with reference to nanowires 102.Moreover, nanowires 304 can operate in any manner similar to thatdescribed herein with reference to nanowires 102. Furthermore, thenon-single crystal substrate 308 can be implemented in any mannersimilar to that described herein with reference to the non-singlecrystal substrate 108.

Within FIG. 3, the nanowires 304 can each have electrical contact (or beelectrically coupled) at both of its ends. As such, the nanowires 304 ofapparatus 300 can be referred to as a virtual bridging configuration. Itis noted that the nanowires 304 of apparatus 300 are able to combine theadvantages (e.g., high photon-to-electron conversion efficiency) ofsingle crystal semiconductor properties with a non-single crystallinesubstrate 308. It is pointed out that even though substrate 308 iscomposed of non-single crystalline material, nanowires 304 are able tobe grown as single crystal structures because of their one-dimensionalcharacteristics with extremely small diameter.

It is understood that apparatus 300 can be utilized with displaytechnology. For example, the nanowires 304 of a first apparatus 300 canbe fabricated with material that generates red light 110 for a displaypixel, the nanowires 304 of a second apparatus 300 can be implementedwith material that generates green light 110 for the display pixel, andthe nanowires 304 of a third apparatus 300 can be implemented withmaterial that generates blue light 110 for the display pixel. In thismanner, each pixel of the display can have 3 biased points, so eachpixel can have 3 electrically separate elements (e.g., apparatus 300).Additionally, a plurality of apparatuses 300 can be utilized for displayarrays.

FIG. 4 is a side section view of an exemplary apparatus 400 thatincludes one or more nanowires 304 grown in a “virtual bridging”configuration in accordance with various embodiments of the invention.It is noted that apparatus 400 is similar to apparatus 300 of FIG. 3.However, the nanowires 304 of apparatus 400 are grown on a layer ofnon-single crystalline material 310. It is understood that the layer ofnon-single crystalline material 310 can be implemented with any materialor materials similar to the described herein with reference to thenon-single crystalline material surfaces 104 and 106, but is not limitedto such. For example, material layer 310 can be implemented with, but isnot limited to, microcrystalline silicon (μc-Si).

It is appreciated that nanowires 304 of apparatus 400 can be implementedin any manner similar to that described herein with reference tonanowires 102. Moreover, nanowires 304 of FIG. 4 can operate in anymanner similar to that described herein with reference to nanowires 102.Furthermore, the non-single crystal substrate 308 can be implemented inany manner similar to that described herein with reference to thenon-single crystal substrate 108.

Within FIG. 4, the nanowires 304 can each have electrical contact (or beelectrically coupled) at both of its ends. As such, the nanowires 304 ofapparatus 400 can be referred to as a virtual bridging configuration. Itis noted that the nanowires 304 of apparatus 400 are able to combine theadvantages (e.g., high photon-to-electron conversion efficiency) ofsingle crystal semiconductor properties with a non-single crystallinelayer 310 and substrate 308. It is pointed out that even though layer310 is composed of non-single crystalline material, nanowires 304 areable to be grown as single crystal structures because of theirone-dimensional structural characteristics with extremely smalldiameter. It is understood that apparatus 400 can be utilized in anymanner similar to apparatus 300 described herein.

FIG. 5 is a side section view of an exemplary apparatus 500 thatincludes one or more nanowires 502, 504 and 506 grown in a “bridging”configuration in accordance with various embodiments of the invention.Specifically, apparatus 500 illustrates a configuration that can beutilized for solar cells and/or radiation/light detectors in accordancewith various embodiments of the invention, but is not limited to such.

It is noted that protruding portions 516 and 518 (along with nanowires502) can be implemented and operate in any manner similar to thatdescribed herein with reference to protruding portions 104 and 106 (andnanowires 102) of FIG. 1. Furthermore, protruding portions 518 and 520(along with nanowires 504) can be implemented and operate in any mannersimilar to that described herein with reference to protruding portions104 and 106 (and nanowires 102) of FIG. 1. Moreover, protruding portions520 and 522 (along with nanowires 506) can be implemented and operate inany manner similar to that described herein with reference to protrudingportions 104 and 106 (and nanowires 102) of FIG. 1. However, it is notedthat protruding portions 516, 518, 520 and 522 each are coupled to anelectrode 508, 510, 512 and 514, respectively. The electrodes 508, 510,512 and 514 (which can each be implemented in any manner similar to thatdescribed herein with reference to electrode 302) are coupled at the“top” of each protruding portions 516, 518, 520 and 522 thereby enablingeach to be electrically coupled to other circuitry (e.g., associatedwith solar cell functionality). Furthermore, the non-single crystalsubstrate 524 can be implemented in any manner similar to that describedherein with reference to the non-single crystal substrate 108.

It is pointed out that there are other configurations of nanowire“bridging” in accordance with various embodiments of the invention thatare not specifically shown herein. Note that the various embodiments inaccordance with the invention are not limited to those nanowire bridgingconfigurations shown herein.

FIG. 6 is a flow diagram of a method 600 for fabricating an apparatusthat includes one or more nanowires in accordance with variousembodiments of the invention. Method 600 includes exemplary processes ofvarious embodiments of the invention that can be carried out by aprocessor(s) and electrical components under the control of computingdevice readable and executable instructions (or code), e.g., software.The computing device readable and executable instructions (or code) mayreside, for example, in data storage features such as volatile memory,non-volatile memory and/or mass data storage that can be usable by acomputing device. However, the computing device readable and executableinstructions (or code) may reside in any type of computing devicereadable medium. Although specific operations are disclosed in method600, such operations are exemplary. Method 600 may not include all ofthe operations illustrated by FIG. 6. Also, method 600 may includevarious other operations and/or variations of the operations shown byFIG. 6. Likewise, the sequence of the operations of method 600 can bemodified. It is noted that the operations of method 600 can be performedby software, by firmware, by electronic hardware, or by any combinationthereof.

Specifically, a material can be disposed above a non-single crystalsubstrate. One or more nanowires can be disposed above the material andthe non-single crystal substrate. An insulating material can be disposedabove at least a portion of the one or more nanowires, the material, andthe non-single crystal substrate. An electrode can be coupled to the oneor more nanowires for conducting current. In this manner, an apparatuscan be fabricated that can include one or more nanowires in accordancewith various embodiments of the invention.

At operation 602 of FIG. 6, a material (e.g., 310) can be disposed abovea non-single crystal substrate (e.g., 308). Note that operation 602 canbe implemented in a wide variety of ways. For example, the material caninclude, but is not limited to, polycrystalline silicon, amorphoussilicon, poly-crystal (grain size is in the range of micro meter to nanometer) diamond and related carbon-based materials, microcrystallinesilicon, and/or the like. It is appreciated that operation 602 can beimplemented in any manner similar to that described herein, but is notlimited to such.

At operation 604, one or more nanowires (e.g., 304) can be disposedabove the material and the non-single crystal substrate. It isunderstood that operation 604 can be implemented in a wide variety ofways. For example, the one or more nanowires can include at least, butis not limited to, a metal, a group III-V compound semiconductormaterial and related alloys, a group II-VI compound semiconductormaterial and related alloys, a group IV semiconductor material andrelated alloys, and/or the like. It is noted that operation 604 can beimplemented in any manner similar to that described herein, but is notlimited to such.

At operation 606 of FIG. 6, an insulating material (e.g., 306) can bedisposed above at least a portion of the one or more nanowires, thematerial, and the non-single crystal substrate. It is appreciated thatoperation 606 can be implemented in a wide variety of ways. For example,operation 606 can be implemented in any manner similar to that describedherein, but is not limited to such.

At operation 608, an electrode (e.g., 302) can be coupled to the one ormore nanowires for conducting current. It is understood that operation608 can be implemented in a wide variety of ways. For example, operation608 can be implemented in any manner similar to that described herein,but is not limited to such. At the completion of operation 608, process600 can be exited. In this fashion, an apparatus can be fabricated thatcan include one or more nanowires in accordance with various embodimentsof the invention. It is pointed out that the one or more nanowires ofprocess 600 can be utilized for emitting light (or any electromagneticwave) in accordance with various embodiments of the invention. Moreover,the one or more nanowires of process 600 can be utilized for absorbinglight (or any electromagnetic wave) and generating a current inaccordance with various embodiments of the invention. The apparatus ofprocess 600 can be incorporated with a display device, radiation/lightdetector device, and/or a solar cell device, but is not limited to such.

FIG. 7 is a flow diagram of a method 700 for fabricating an apparatusthat includes one or more nanowires in accordance with variousembodiments of the invention. Method 700 includes exemplary processes ofvarious embodiments of the invention that can be carried out by aprocessor(s) and electrical components under the control of computingdevice readable and executable instructions (or code), e.g., software.The computing device readable and executable instructions (or code) mayreside, for example, in data storage features such as volatile memory,non-volatile memory and/or mass data storage that can be usable by acomputing device. However, the computing device readable and executableinstructions (or code) may reside in any type of computing devicereadable medium. Although specific operations are disclosed in method700, such operations are exemplary. Method 700 may not include all ofthe operations illustrated by FIG. 7. Also, method 700 may includevarious other operations and/or variations of the operations shown byFIG. 7. Likewise, the sequence of the operations of method 700 can bemodified. It is noted that the operations of method 700 can be performedby software, by firmware, by electronic hardware, or by any combinationthereof.

Specifically, one or more protruding portions can be formed inassociation with a non-single crystal substrate. At least a firstprotruding portion and a second protruding portion can each include anelectrode. One or more nanowires can be formed between at least thefirst protruding portion and the second protruding portion. In thismanner, an apparatus can be fabricated that can include one or morenanowires in accordance with various embodiments of the invention. It isnoted that at least one of the first and second protruding portions canbe biased to cause the apparatus to operate in a particular manner.

At operation 702 of FIG. 7, one or more protruding portions (e.g., 104,106, and the like) can be formed in association with a non-singlecrystal substrate. Note that operation 702 can be implemented in a widevariety of ways. For example, at least a first protruding portion and asecond protruding portion can each include an electrode. It isappreciated that operation 702 can be implemented in any manner similarto that described herein, but is not limited to such.

At operation 704, one or more nanowires (e.g., 304) can be formedbetween at least the first protruding portion (e.g., 104) and the secondprotruding portion (e.g., 106). It is understood that operation 704 canbe implemented in a wide variety of ways. For example, operation 704 canbe implemented in any manner similar to that described herein, but isnot limited to such. In this manner, an apparatus (e.g., 100, and thelike) can be fabricated that can include one or more nanowires inaccordance with various embodiments of the invention.

At operation 706 of FIG. 7, at least one of the first and secondprotruding portions can be biased to cause the apparatus to operate in aparticular manner. It is appreciated that operation 706 can beimplemented in a wide variety of ways. For example, operation 706 can beimplemented in any manner similar to that described herein, but is notlimited to such. At the completion of operation 706, process 700 can beexited. It is pointed out that the one or more nanowires of process 700can be utilized for emitting light (or any electromagnetic wave) inaccordance with various embodiments of the invention. Moreover, the oneor more nanowires of process 700 can be utilized for absorbing light (orany electromagnetic wave) and generating a current in accordance withvarious embodiments of the invention. The apparatus of process 700 canbe incorporated with a display device, radiation/light detector device,and/or a solar cell device, but is not limited to such.

The foregoing descriptions of various specific embodiments in accordancewith the invention have been presented for purposes of illustration anddescription. They are not intended to be exhaustive or to limit theinvention to the precise forms disclosed, and obviously manymodifications and variations are possible in light of the aboveteaching. The invention can be construed according to the Claims andtheir equivalents.

1. An apparatus comprising: a substrate comprising a non-single crystalsurface that enables crystalline nanowire growth and wherein saidsubstrate is electrically conductive; a plurality of crystallinenanowires crystallographically attached to said non-single crystalsurface of said substrate, wherein said plurality of crystallinenanowires are randomly oriented on said non-single crystal surface; andan electrode coupled to at least one crystalline nanowire of saidplurality of crystalline nanowires, wherein said plurality ofcrystalline nanowires are electrically conductive or optically active.2. The apparatus of claim 1, wherein said at least one crystallinenanowire is for emitting electromagnetic wave.
 3. A display devicecomprising the apparatus of claim
 2. 4. The apparatus of claim 1,wherein said at least one crystalline nanowire is for absorbingelectromagnetic wave and generating a current.
 5. A solar cellcomprising the apparatus of claim
 4. 6. The apparatus of claim 1 whereinsaid substrate comprises amorphous silicon.
 7. The apparatus of claim 1wherein said substrate comprises microcrystalline silicon.
 8. Anapparatus comprising: a substrate comprising: a first protruding portioncomprising a non-single crystal surface that enables crystallinenanowire growth; and a second protruding portion comprising a non-singlecrystal surface that enables crystalline nanowire growth; and at leastone crystalline nanowire crystallographically attached to said firstprotruding portion at a first end of said at least one crystallinenanowire and crystallographically attached to said second protrudingportion at a second end of said at least one crystalline nanowire, saidat least one crystalline nanowire for emitting light or for absorbing anelectromagnetic wave and generating a current.
 9. The apparatus of claim8, wherein said apparatus is incorporated with a device selected fromthe group consisting of a display and a solar cell.
 10. The apparatus ofclaim 8 wherein said substrate comprises amorphous silicon.
 11. Theapparatus of claim 8 wherein said substrate comprises microcrystallinesilicon.
 12. An apparatus comprising: a substrate comprising: a firstprotruding portion comprising a non-single crystal surface that enablescrystalline nanowire growth; and a second protruding portion comprisinga non-single crystal surface that enables crystalline nanowire growth;at least one crystalline nanowire crystallographically attached to saidfirst protruding portion and extending towards said second protrudingportion; and at least one crystalline nanowire crystallographicallyattached to said second protruding portion and extending towards saidfirst protruding portion.
 13. The apparatus of claim 12 wherein saidsubstrate comprises amorphous silicon.
 14. The apparatus of claim 12wherein said substrate comprises microcrystalline silicon.